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HFA3102
Data Sheet July 14, 2005 FN3635.5
Dual Long-Tailed Pair Transistor Array
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.
Features
* High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz * High Power Gain-Bandwidth Product. . . . . . . . . . . . 5GHz * High Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . 70 * Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB * Low Collector Leakage Current . . . . . . . . . . . . . . <0.01nA * Excellent hFE and VBE Matching
Ordering Information
PART NUMBER HFA3102B96 HFA3102BZ (Note) HFA3102BZ96 (Note) TEMP. RANGE (C) -40 to 85 -40 to 85 -40 to 85 PACKAGE 14 Ld SOIC Tape and Reel 14 Ld SOIC (Pb-free) PKG. DWG. # M14.15 M14.15
* Pin-to-Pin to UPA102G * Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
* Single Balanced Mixers * Wide Band Amplification Stages * Differential Amplifiers * Multipliers * Automatic Gain Control Circuits * Frequency Doublers, Tripplers * Oscillators * Constant Current Sources
14 Ld SOIC Tape M14.15 and Reel (Pb-free)
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
Pinout/Functional Diagram
HFA3102 (SOIC) TOP VIEW
14 13 12 11 10 9 8
* Wireless Communication Systems * Radio and Satellite Communications * Fiber Optic Signal Processing * High Performance Instrumentation
Q1
Q2
Q6
Q3
Q4
Q5
1
2
3
4
5
6
7
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2003, 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners.
HFA3102
Absolute Maximum Ratings TA = 25C
VCEO Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . 8.0V VCBO Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . 12.0V VEBO Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . 12.0V IC , Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Thermal Information
Thermal Resistance (Typical, Note 1)
JA (C/W)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to 85C
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 Maximum Power Dissipation at 75 Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.25W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175C Maximum Junction Temperature (Plastic Package) . . . . . . . . 150C Maximum Storage Temperature Range . . . . . . . . . . -65C to 150C Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300C (SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. JA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25C (NOTE 2) TEST LEVEL A A A A A A B B C C C C C C C C A A A C B ALL GRADES MIN 12 8 5.5 40 0.9 TYP 18 12 6 0.1 70 300 200 10 5 17.5 12.4 1.8 2.1 3.3 3.5 1.0 1.5 5 0.5 0.01 MAX 10 100 1.1 5 25 UNITS V V V fF fF GHz GHz dB dB dB dB dB dB mV A V/C nA
SYMBOLS V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE CCB CEB fT fMAX GNFMIN
PARAMETER Collector-to-Base Breakdown Voltage (Q1, Q2, Q4, and Q5) Collector-to-Emitter Breakdown Voltage (Q1 thru Q6) Emitter-to-Base Breakdown Voltage (Q3 and Q6) Collector Cutoff Current (Q1, Q2, Q4, and Q5) Emitter Cutoff Current (Q3 and Q6) DC Current Gain (Q1 thru Q6) Collector-to-Base Capacitance Emitter-to-Base Capacitance Current Gain-Bandwidth Product Power Gain-Bandwidth Product Available Gain at Minimum Noise Figure
TEST CONDITIONS IC = 100A, IE = 0 IC = 100A, IB = 0 IE = 50A, IC = 0 VCB = 5V, IE = 0 VEB = 1V, IC = 0 IC = 10mA, VCE = 3V VCB = 5V, f = 1MHz VEB = 0, f = 1MHz IC = 10mA, VCE = 5V IC = 10mA, VCE = 5V IC = 3mA, VCE = 3V IC = 3mA, VCE = 3V IC = 3mA, VCE = 3V f = 0.5GHz f = 1.0GHz f = 0.5GHz f = 1.0GHz f = 0.5GHz f = 1.0GHz
NFMIN
Minimum Noise Figure
NF50
50 Noise Figure
hFE1/hFE2 VOS IOS dVOS/dT ITRENCHLEAKAGE
DC Current Gain Matching (Q1 and Q2, Q4 and Q5) Input Offset Voltage (Q1 and Q2), (Q4 and Q5) Input Offset Current (Q1 and Q2), (Q4 and Q5) Input Offset Voltage TC (Q1 and Q2, Q4 and Q5) Collector-to-Collector Leakage (Pin 6, 7, 13, and 14)
IC = 10mA, VCE = 3V IC = 10mA, VCE = 3V IC = 10mA, VCE = 3V IC = 10mA, VCE = 3V VTEST = 5V
NOTE: 2. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only
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FN3635.5 July 14, 2005
HFA3102 PSPICE Model for a Single Transistor
.Model NUHFARRY NPN + ( IS= 1.840E-16 VAF= 7.200E+01 + VAR= 4.500E+00 NE= 1.400E+00 + IKF= 5.400E-02 ISC= 1.605E-14 + NC= 1.800E+00 CJC= 3.980E-13 + MJC= 2.400E-01 CJE= 2.400E-13 + MJE= 5.100E-01 TF= 10.51E-12 + ITF= 3.500E-02 PTF= 0.000E+00 + XCJC= 9.000E-01 MJS= 0.000E+00 + RE= 1.848E+00 KF= 0.000E+00 + AF= 1.000E+00) XTI= 3.000E+00 BF= 1.036E+02 XTB= 0.000E+00 IKR= 5.400E-02 VJC= 9.700E-01 VJE= 8.690E-01 XTF= 2.300E+00 CJS= 1.689E-13 RB= 5.007E+01 EG= 1.110E+00 ISE= 1.686E-19 BR= 1.000E+01 RC= 1.140E+01 FC= 5.000E-01 TR= 4.000E-09 VTF= 3.500E+00 VJS= 9.982E-01 RBM= 1.974E+00
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FN3635.5 July 14, 2005
HFA3102 Common Emitter S-Parameters
VCE = 5V and IC = 5mA
FREQ. (Hz) 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 |S11| 0.833079 0.791776 0.734911 0.672811 0.612401 0.557126 0.508133 0.465361 0.428238 0.396034 0.368032 0.343589 0.322155 0.303268 0.286542 0.271660 0.258359 0.246420 0.235659 0.225923 0.217085 0.209034 0.201678 0.194939 0.188747 0.183044 0.177780 0.172909 0.168394 0.164200 PHASE(S11) -11.7873 -22.8290 -32.6450 -41.0871 -48.2370 -54.2780 -59.4102 -63.8123 -67.6313 -70.9834 -73.9591 -76.6285 -79.0462 -81.2548 -83.2880 -85.1723 -86.9292 -88.5759 -90.1265 -91.5925 -92.9836 -94.3076 -95.5713 -96.7803 -97.9395 -99.0530 -100.124 -101.156 -102.152 -103.114 |S12| 1.418901E-02 2.695740E-02 3.750029E-02 4.572138E-02 5.194147E-02 5.659943E-02 6.009507E-02 6.274213E-02 6.477134E-02 6.634791E-02 6.758932E-02 6.857937E-02 6.937837E-02 7.003020E-02 7.056718E-02 7.101343E-02 7.138717E-02 7.170231E-02 7.196964E-02 7.219757E-02 7.239274E-02 7.256046E-02 7.270498E-02 7.282977E-02 7.293764E-02 7.303093E-02 7.311157E-02 7.318117E-02 7.324107E-02 7.329243E-02 PHASE(S12) 78.8805 68.6355 59.5861 51.9018 45.5043 40.2112 35.8226 32.1594 29.0743 26.4506 24.1974 22.2441 20.5358 19.0293 17.6908 16.4930 15.4143 14.4370 13.5469 12.7319 11.9824 11.2901 10.6480 10.0503 9.49212 8.96908 8.47753 8.01430 7.57661 7.16204 |S21| 11.0722 10.5177 9.75379 8.91866 8.10511 7.35944 6.69712 6.11750 5.61303 5.17405 4.79104 4.45546 4.15997 3.89845 3.66577 3.45770 3.27074 3.10197 2.94897 2.80969 2.68243 2.56573 2.45837 2.35928 2.26756 2.18243 2.10322 2.02934 1.96027 1.89556 PHASE(S21) 168.576 157.897 148.443 140.361 133.569 127.882 123.102 119.047 115.571 112.556 109.913 107.570 105.472 103.576 101.849 100.262 98.7956 97.4307 96.1533 94.9515 93.8156 92.7373 91.7097 90.7271 89.7844 88.8775 88.0026 87.1565 86.3366 85.5404 |S22| 0.976833 0.930993 0.868128 0.799886 0.734033 0.674392 0.622181 0.577269 0.538952 0.506365 0.478663 0.455091 0.435008 0.417872 0.403238 0.390735 0.380056 0.370947 0.363195 0.356623 0.351081 0.346442 0.342599 0.339458 0.336942 0.334982 0.333518 0.332499 0.331879 0.331620 PHASE(S22) -11.0509 -21.3586 -30.4451 -38.1641 -44.5998 -49.9370 -54.3777 -58.1022 -61.2587 -63.9647 -66.3116 -68.3702 -70.1958 -71.8314 -73.3108 -74.6609 -75.9030 -77.0544 -78.1288 -79.1377 -80.0903 -80.9942 -81.8557 -82.6802 -83.4719 -84.2347 -84.9716 -85.6853 -86.3781 -87.0518
VCE = 5V and IC = 10mA
FREQ. (Hz) 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 |S11| 0.728106 0.670836 0.600268 0.531768 0.471795 0.421506 0.379961 0.345693 PHASE(S11) -16.4319 -31.2669 -43.7663 -54.0028 -62.3880 -69.3569 -75.2612 -80.3608 |S12| 1.273920E-02 2.342300E-02 3.132521E-02 3.681579E-02 4.057046E-02 4.316292E-02 4.499071E-02 4.631140E-02 PHASE(S12) 75.4177 62.8941 52.5891 44.5019 38.2308 33.3405 29.4764 26.3755 |S21| 15.1273 13.9061 12.3970 10.9257 9.62995 8.53559 7.62375 6.86423 PHASE(S21) 165.227 152.045 141.185 132.570 125.781 120.378 116.005 112.398 |S22| 0.959692 0.886232 0.796016 0.708892 0.633146 0.570209 0.518803 0.476987 PHASE(S22) -14.2688 -26.9507 -37.3172 -45.4503 -51.7704 -56.7206 -60.6598 -63.8540
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FN3635.5 July 14, 2005
HFA3102
VCE = 5V and IC = 10mA (Continued)
FREQ. (Hz) 1.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 |S11| 0.728106 0.317301 0.293608 0.273680 0.256782 0.242344 0.229918 0.219152 0.209767 0.201539 0.194288 0.187867 0.182157 0.177056 0.172484 0.168370 0.164656 0.161293 0.158239 0.155458 0.152919 0.150595 0.148463 PHASE(S11) -16.4319 -84.8420 -88.8381 -92.4452 -95.7336 -98.7555 -101.551 -104.150 -106.577 -108.851 -110.988 -113.001 -114.902 -116.698 -118.399 -120.012 -121.542 -122.996 -124.378 -125.694 -126.947 -128.140 -129.279 |S12| 1.273920E-02 4.728948E-02 4.803091E-02 4.860515E-02 4.905871E-02 4.942344E-02 4.972158E-02 4.996903E-02 5.017730E-02 5.035491E-02 5.050825E-02 5.064218E-02 5.076045E-02 5.086598E-02 5.096107E-02 5.104755E-02 5.112690E-02 5.120031E-02 5.126876E-02 5.133304E-02 5.139381E-02 5.145164E-02 5.150697E-02 PHASE(S12) 75.4177 23.8481 21.7581 20.0070 18.5224 17.2505 16.1506 15.1915 14.3490 13.6040 12.9411 12.3482 11.8151 11.3338 10.8974 10.5001 10.1373 9.80479 9.49919 9.21750 8.95716 8.71595 8.49194 |S21| 15.1273 6.22797 5.69057 5.23257 4.83873 4.49716 4.19854 3.93554 3.70234 3.49428 3.30758 3.13919 2.98658 2.84766 2.72068 2.60420 2.49697 2.39793 2.30619 2.22098 2.14162 2.06753 1.99820 PHASE(S21) 165.227 109.365 106.771 104.518 102.532 100.759 99.1602 97.7028 96.3629 95.1215 93.9633 92.8761 91.8500 90.8766 89.9494 89.0626 88.2115 87.3920 86.6007 85.8348 85.0916 84.3690 83.6651 |S22| 0.959692 0.442915 0.415044 0.392146 0.373261 0.357640 0.344698 0.333974 0.325102 0.317789 0.311800 0.306940 0.303051 0.300003 0.297686 0.296007 0.294889 0.294266 0.294081 0.294285 0.294836 0.295696 0.296834 PHASE(S22) -14.2688 -66.4948 -68.7193 -70.6269 -72.2899 -73.7620 -75.0832 -76.2840 -77.3877 -78.4122 -79.3715 -80.2768 -81.1365 -81.9578 -82.7460 -83.5057 -84.2405 -84.9533 -85.6466 -86.3223 -86.9822 -87.6275 -88.2595
Typical Performance Curves
12 IB = 150A 10 IB = 120A 8 IC (mA) IB = 90A 6 IB = 60A 4 IB = 30A 2 0 hFE 140 120 100 80 60 40 20 0 10-10
0
1
2 VCE (V)
3
4
5
10-8
10-6
10-4 IC (A)
10-2
100
FIGURE 1. IC vs VCE
FIGURE 2. hFE vs IC
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FN3635.5 July 14, 2005
HFA3102 Typical Performance Curves
(Continued)
100 VCE = 3V 10-2 IC AND IB (A) 10-4 10-6 10-8 10-10 10-12 0.4 0.6 VBE (V) 0.8 1.0 fT (GHz)
12 VCE = 5V 10 8 6 4 2 0 10-4
10-3
IC (A)
10-2
10-1
FIGURE 3. GUMMEL PLOT
FIGURE 4. fT vs IC
4.8 4.6 NOISE FIGURE (dB) 4.4 4.2 4.0 3.8 3.6 3.4 3.2 0 0.5 1.0 1.5 2.0 2.5 3.0 FREQUENCY (GHz)
20 18 POUT, OUTPUT POWER (dBm) 16 |S21| (dB) 14 12 10 8 6 4 40 20 0 -20 -40 -60 -80 VCE = 5V IC = 10mA f = 1GHz 3RD ORDER PRODUCTS -20 -10 0 PIN , INPUT POWER (dBm) 10 3rd ORDER INTERCEPT POINT 1dB COMPRESSION POINT
-100 -30
FIGURE 5. GAIN AND NOISE FIGURE vs FREQUENCY
FIGURE 6. P1dB AND 3RD ORDER INTERCEPT
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FN3635.5 July 14, 2005
HFA3102 Die Characteristics
PROCESS: UHF-1 DIE DIMENSIONS: 53 mils x 52 mils x 14 mils 1340m x 1320m x 355.6m METALLIZATION: Type: Metal 1: AlCu(2%)/TiW Thickness: Metal 1: 8kA 0.5kA Type: Metal 2: AlCu(2%) Thickness: Metal 2: 16kA 0.8kA PASSIVATION: Type: Nitride Thickness: 4kA 0.5kA SUBSTRATE POTENTIAL (POWERED UP): Floating
Metallization Mask Layout
HFA3102 TOP VIEW
2
1
14
13
12 3 11 1340m (53 mils) 4 10 5
6
7
8
9
1320m (52 mils)
Pad numbers correspond to the 14 pin SOIC pinout.
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FN3635.5 July 14, 2005
HFA3102 Small Outline Plastic Packages (SOIC)
N INDEX AREA E -B1 2 3 SEATING PLANE -AD -CA h x 45o H 0.25(0.010) M BM
M14.15 (JEDEC MS-012-AB ISSUE C)
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE INCHES SYMBOL A
L
MILLIMETERS MIN 1.35 0.10 0.33 0.19 8.55 3.80 MAX 1.75 0.25 0.51 0.25 8.75 4.00 NOTES 9 3 4 5 6 7 8o Rev. 0 12/93
MIN 0.0532 0.0040 0.013 0.0075 0.3367 0.1497
MAX 0.0688 0.0098 0.020 0.0098 0.3444 0.1574
A1 B C D E
A1 0.10(0.004) C
e
B 0.25(0.010) M C AM BS
e H h L N
0.050 BSC 0.2284 0.0099 0.016 14 0o 8o 0.2440 0.0196 0.050
1.27 BSC 5.80 0.25 0.40 14 0o 6.20 0.50 1.27
NOTES: 1. Symbols are defined in the "MO Series Symbol List" in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension "E" does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. "L" is the length of terminal for soldering to a substrate. 7. "N" is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width "B", as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 8
FN3635.5 July 14, 2005

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